法國Annealsys 高溫退火爐AS-ONE

 

Versatile Rapid Thermal Processing system for silicon, compound semiconductors, solar cells & MEMS 多用途快速熱處理設備，適用于硅，化合物半導體，太陽能電池& MEMS

 

Up to 1450°C (100HT version), up to 200°C/s, high vacuum capability, fast cooling option 最高溫度到1450℃（100HT版本）, 升溫速率最大200℃/s, 高真空性能，快速冷卻選項

 

Applications 應用

. Implant annealing  注入退火

. Ohmic contact annealing (III-V and SiC) 歐姆接觸退火(III-V 和SiC）

. Rapid Thermal Oxidation (RTO) 快速熱氧化(RTO)

. Rapid Thermal Nitridation (RTN)  快速熱氮化 (RTN)

. Selenization (CIGS solar cells)  硒化（CIGS太陽能電池） 

. CVD of graphene 石墨烯CVD

. Silicon carbonization 碳化硅

. Sol-gel densification and crystallization 溶膠凝膠致密性和結晶化

. Diffusion from spin-on dopants 從旋涂摻雜物擴散 

.Etc. 等等

 

Substrate types 基片類型

• Silicon wafers硅片

• Compound semiconductor wafers化合物半導體基片

• GaN/Sapphire wafers for LEDs 用于LED的GaN/藍寶石基片

• Silicon carbide wafers碳化硅基片

• Poly silicon wafers for solar cells用于太陽能電池的多晶硅基片

• Glass substrates玻璃基片

• Metals金屬

• Polymers聚合物

• Graphite and silicon carbide susceptors石墨和鍍碳化硅的石墨基片托

• Etc等等

 

Key Features 主要特性

• Infrared halogen tubular lamp furnace with silent fan cooling •配有無聲風扇冷卻的紅外鹵素管燈退火爐

• Stainless steel cold wall chamber technology •不銹鋼冷壁腔室技術

• Fast digital PID temperature controller •快速數字PID溫度控制器

• Thermocouple and pyrometer control •熱電偶和高溫計控制

• Atmospheric and vacuum process capability •常壓和真空下工藝性能

• Purge gas line with needle valve •配有針閥的吹掃氣路

• Up to 5 process gas lines with digital MFC •最多5路工藝氣路配有數字MFC控制器

• PC control with Ethernet communication for fast data logging •配有以太網通訊的PC控制，用于快速數據記錄

• Optional turbo pump and pressure control •可選分子泵和壓力控制

 

Floor standing system for reduced footprint 減少占地空間的立式設備

 

Reactor design 反應器設計

Stainless steel cold wall chamber advantages 不銹鋼冷壁優勢

Chamber design advantages 腔室設計優勢

 

Reactor design 反應器設計

Process gases are injected underneath the quartz window for uniform gas flow distribution and to avoid cold points on the wafer. They are pumped down through the bedplate on the opposite side 工藝氣體從底部石英窗注入，可均勻氣流分布，避免基片上的冷點，在對面的底板處抽走。

 

Reactor design 反應器設計

Full access for chamber loading, thermocouple installation and cleaning if needed 可根據需求進行自由的腔室裝載，熱電偶安裝及清潔

 

Reactor design 反應器設計

Easy sample loading with clamshell configuration 帶蓋配置可實現便捷的樣品裝載

Easy and fast installation of quartz pins for different substrate sizes 方便快捷的安裝用于不同基片尺寸的石英針

Furnace control 退火爐控制

Temperature control 溫度的控制

Pulse power control 脈沖功率控制

 

Options: fast cooling system 選配：快速冷卻系統

Process heating position: wafer held by quartz pins 工藝加熱位置：基片由石英針支撐

 

Options: fast cooling system 選配：快速冷卻系統

Fast cooling position: wafer in contact with water-cooled bedplate 快速冷卻位置：基片接觸水冷底板

 

Comparison between standard cooling and fast cooling in AS-One 100 AS-One 100設備標準冷卻和快速冷卻對比

 

Acceleration of the cooling rate in AS-One 100 Example with susceptor WITHOUT contact with the water cooled bedplate AS-One 100設備加速冷卻率 以基片托不接觸水冷底板為例

4-inch susceptor with 3-inch cavity Accelerated cooling WITHOUT contact with the bedplate Cooling is accelerated by putting the susceptor close to the bedplate and injecting gas 帶有3英寸凹槽的4英寸基片托，快速冷卻，無需接觸底板，通過使基片托與底板和 注入氣體接觸實現快速冷卻。 Cooling rate up to 4 times faster compared to standard RTP furnace 較標準RTP火爐，冷卻速度快4倍

 

Selenization kit for photovoltaic applications In situ vaporization of solid Se or S 應用于光電領域的硒化裝置 原地蒸發固態Se 或 S

Temperature gradient control between crucible for Se/S vaporization and substrate Several configurations available 坩堝中Se/S蒸發和基片的溫度梯度控制 可選多種配置

 

Special options: automatic opening 特殊選配：自動開啟 Automatic pneumatic opening system (bi-manual control for closing with user safety) 自動氣動開啟系統 （考慮到用戶安全，需雙手控制關閉）

 

Standard Vacuum and Gas configuration 標準真空和氣體結構

 

Turbo pump configuration 分子泵泵配置

 

Vacuum and gas 真空和氣體